A research team has taken a major step forward in the field of spintronics, a technology that uses not only the charge but also the spin of electrons to create faster, smarter, and more energy-efficient electronic devices. Their discovery could pave the way for the next generation of memory chips that combine high speed with low power consumption.
In spintronic memory, information is stored using tiny magnetic regions called magnetic domains. A magnetic domain with its magnetic moments pointing upward represents a “1,” while one pointing downward represents a “0.” Data can be read or written by shifting these domains with an electric current.
The boundaries between them, known as domain walls, play a crucial role, as moving domains means moving these walls. Achieving fast and efficient domain wall motion is essential for developing advanced memories such as magnetic shift registers and three-terminal magnetic random access memories (MRAM).