Over the past decades, electronics engineers have developed a wide range of memory devices that can safely and efficiently store increasing amounts of data. However, the different types of devices developed to date come with their own trade-offs, which pose limits on their overall performance and restrict their possible applications.
Researchers at Université Grenoble Alpes (CEA-Leti, CEA List), Université de Bordeaux (CNRS) and Université Paris-Saclay (CNRS) recently developed a new memory device that combines two complementary components typically used individually, known as memristors and ferroelectric capacitors (FeCAPs). This unified memristor-ferroelectric memory, presented in a paper published in Nature Electronics, could be particularly promising for running artificial intelligence (AI) systems that autonomously learn to make increasingly accurate predictions.
“The ‘ideal’ memory would be high-density, non-volatile, capable of non-destructive readout, and offer virtually infinite endurance,” Elisa Vianello, senior author of the paper, told Tech Xplore.








