A study from the Research Center for Materials Nanoarchitectonics (MANA), one of the centers under the National Institute for Materials Science (NIMS), presents a new method to reveal hidden material disorder reflected in complex photoluminescence spectra, paving the way for new optical diagnostics of material disorder in two-dimensional semiconductors and related light-emitting materials.
When two ultrathin semiconductor layers, such as molybdenum diselenide and tungsten diselenide (MoSe2/WSe2), are stacked with a slight twist, they form a repeating pattern called a moiré heterostructure. These structures have unusual light-emitting properties, featuring a complex landscape of photoluminescence spectra across their surface.
While scientists often analyze materials by looking at the individual peaks of their emission spectra, moiré heterostructures produce spectra with many overlapping peaks whose origins are difficult to explain individually.








