Future of
Now, scientists are on a quest to find a superconductor that can operate at room temperature and ambient pressure.
Scientists are using computer calculations to guide their search. These calculations help determine the structure and properties of the material they’re looking for, according to ScienceNews.
The new fiber battery is manufactured using novel battery gels and a standard fiber-drawing system. In a press release issued by MIT, MIT postdoc Tural Khudiyev noted that previous attempts to make batteries in fiber form were structured with key materials on the outside of the fiber. In the latest development, his system embeds the lithium and other materials inside the fiber, with a protective outside coating, creating a stable and waterproof version. He said it demonstrates that it’s possible to make a fiber battery that can be up to a kilometer long and highly durable, having many practical applications. As Khudiyev puts it, “there’s no obvious upper limit to the length. We could definitely do a kilometer-scale length.”
The 140-meter fiber produced can charge smartwatches or phones, with an energy storage capacity of 123 milliamp-hours.
“The beauty of our approach is that we can embed multiple devices in an individual fiber,” said former MIT postdoc Jung Tae Lee. The team had exhibited the integration of LED and Li-ion batteries in a single fiber, and Lee believes that more than three or four devices can be combined in such a small space in the future. “When we integrate these fibers containing multi-devices, the aggregate will advance the reaggregate of a compact fabric computer,” he added.
Scientists have used state-of-the-art 3D printing and microscopy to provide a new glimpse of what happens when taking magnets to three-dimensions on the nanoscale—1000 times smaller than a human hair.
The international team led by Cambridge University’s Cavendish Laboratory used an advanced 3D printing technique they developed to create magnetic double helices—like the double helix of DNA—which twist around one another, combining curvature, chirality, and strong magnetic field interactions between the helices. Doing so, the scientists discovered that these magnetic double helices produce nanoscale topological textures in the magnetic field, something that had never been seen before, opening the door to the next generation of magnetic devices. The results are published in Nature Nanotechnology.
Magnetic devices impact many different parts of our societies, magnets are used for the generation of energy, for data storage and computing. But magnetic computing devices are fast approaching their shrinking limit in two-dimensional systems. For the next generation of computing, there is growing interest in moving to three dimensions, where not only can higher densities be achieved with 3D nanowire architectures, but three-dimensional geometries can change the magnetic properties and offer new functionalities.
The Baikal-S chip is comparable to the Intel Skylake architecture, AMD Zen architecture, and Huawei Kunpeng 920.
This Review examines the scaling prospects of quantum computing systems based on silicon spin technology and how the different layers of such a computer could benefit from using complementary metal–oxide–semiconductor (CMOS) technology.
Researchers have developed a rechargeable lithium-ion battery in the form of an ultra-long fiber that could be woven into fabrics. The battery could enable a wide variety of wearable electronic devices, and might even be used to make 3D-printed batteries in virtually any shape.
The researchers envision new possibilities for self-powered communications, sensing, and computational devices that could be worn like ordinary clothing, as well as devices whose batteries could also double as structural parts.
In a proof of concept, the team behind the new battery technology has produced the world’s longest flexible fiber battery, 140 meters long, to demonstrate that the material can be manufactured to arbitrarily long lengths. The work is described today in the journal Materials Today. MIT postdoc Tural Khudiyev (now an assistant professor at National University of Singapore), former MIT postdoc Jung Tae Lee (now a professor at Kyung Hee University), and Benjamin Grena SM ‘13, Ph.D. ‘17 (currently at Apple) are the lead authors on the paper. Other co-authors are MIT professors Yoel Fink, Ju Li, and John Joannopoulos, and seven others at MIT and elsewhere.
“Today’s technology announcement is about challenging convention and rethinking how we continue to advance society and deliver new innovations that improve life, business and reduce our environmental impact,” said Dr. Mukesh Khare, Vice President of Hybrid Cloud and Systems, IBM Research. “Given the constraints the industry is currently facing along multiple fronts, IBM and Samsung are demonstrating our commitment to joint innovation in semiconductor design and a shared pursuit of what we call ‘hard tech.’”
Moore’s Law – an ongoing trend that shows the number of transistors on a computer chip doubling every two years or so – is now approaching what are considered fundamental barriers. Simply put, as more and more transistors are crammed into a finite area, engineers are running out of space.
Historically, transistors have been built to lie flat upon the surface of a semiconductor, with the electric current flowing laterally, or side-to-side, through them. Vertical Transport Field Effect Transistors (VTFET), by contrast, are built perpendicular to the surface of the chip with a vertical, or up-and-down, current flow.
That could change though, because Samsung and IBM have announced a partnership in which both companies are working together to develop new battery tech that could allow our smartphones to run for an entire week on a single charge.
This comes in the form of a new chip architecture that could potentially reduce the amount of energy consumed by as much as 85% called Vertical-Transport Nanosheet Field Effect Transistor (VTFET). As the name suggests, this new design will allow signals to travel across the chip vertically by stacking transistors on top of each other.
As a result, this could allow phones to perform just as well as they do right now, but with massive gains in energy efficiency. Alternatively, this design would also allow phones to improve on its performance by as much as 100% compared to modern FET alternatives.
LG Electronics USA has just announced its first gaming laptop, the LG UltraGear 17G90Q.
The LG UltraGear 17G90Q is powered by an 11th Gen Intel® Tiger Lake H processor, NVIDIA GeForceTM RTX 3,080 Max-Q graphics card, dual-channel memory and an ultra-fast dual SSD setup. In addition to a 17-inch IPS panel with a 1 millisecond response time and a 300Hz refresh rate, the LG UltraGear gaming laptop ensures immersive, fluid gameplay. To stop all this high-end hardware from melting, the LG 17G90Q cooling system features a vapor chamber that keeps the laptop running cool, even when pushed to the limits.
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“Until now researchers have encoded and stabilized. We now show that we can compute as well.”
Researchers at QuTech—a collaboration between the TU Delft and TNO—have reached a milestone in quantum error correction. They have integrated high-fidelity operations on encoded quantum data with a scalable scheme for repeated data stabilization. The researchers report their findings in the December issue of Nature Physics.
Physical quantum bits, or qubits, are vulnerable to errors. These errors arise from various sources, including quantum decoherence, crosstalk, and imperfect calibration. Fortunately, the theory of quantum error correction stipulates the possibility to compute while synchronously protecting quantum data from such errors.
