Toggle light / dark theme

While automated manufacturing is ubiquitous today, it was once a nascent field birthed by inventors such as Oliver Evans, who is credited with creating the first fully automated industrial process, in flour mill he built and gradually automated in the late 1700s. The processes for creating automated structures or machines are still very top-down, requiring humans, factories, or robots to do the assembling and making.

However, the way nature does assembly is ubiquitously bottom-up; animals and plants are self-assembled at a cellular level, relying on proteins to self-fold into target geometries that encode all the different functions that keep us ticking. For a more bio-inspired, bottom-up approach to assembly, then, human-architected materials need to do better on their own. Making them scalable, selective, and reprogrammable in a way that could mimic nature’s versatility means some teething problems, though.

Now, researchers from MIT’s Computer Science and Artificial Intelligence Laboratory (CSAIL) have attempted to get over these growing pains with a new method: introducing magnetically reprogrammable materials that they coat different parts with—like robotic cubes—to let them self-assemble. Key to their process is a way to make these magnetic programs highly selective about what they connect with, enabling robust self-assembly into specific shapes and chosen configurations.

Field-effect transistors (FETs) are transistors in which the resistance of most of the electrical current can be controlled by a transverse electric field. Over the past decade or so, these devices have proved to be very valuable solutions for controlling the flow of current in semiconductors.

To further develop FETs, electronics engineers worldwide have recently been trying to reduce their size. While these down-scaling efforts have been found to increase the device’s speed and lower the power consumption, they are also associated with short-channel effects (i.e., unfavorable effects that occur when an FET’s channel length is approximately equal to the space charge regions of source and drain junctions within its substrate).

These undesirable effects, which include barrier lowering and velocity saturation, could be suppressed by using 2D semiconductor channels with high carrier mobilities and ultrathin high–k dielectrics (i.e., materials with high dielectric constants). Integrating 2D semiconductors with dielectrics with similar oxide thicknesses has been found to be highly challenging.

“Approximately 200,000 times thinner than human hair.”

New energy-efficient devices are made possible by the thinnest ferroelectric material ever created, thanks to the University of California Berkeley and Argonne National Laboratory.

As a result of this development, intriguing material behavior at small scales could reduce energy demands for computing, revealed ANL.