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Category: futurism – Page 19

High pressure increases terahertz emission 13-fold in 2D semiconductor GaTe, study reveals

A new study led by the Aerospace Information Research Institute of the Chinese Academy of Sciences, along with their collaborators, has demonstrated that high pressure can significantly enhance and precisely tune terahertz (THz) radiation from the two-dimensional semiconductor gallium telluride (GaTe).

Using a diamond anvil cell, the research team achieved a 13-fold increase in THz emission and directly mapped the sequence of ultrafast processes that produce THz waves.

Their findings are published in Laser & Photonics Reviews.

Smart spatial omics (S2-omics) optimizes region of interest selection to capture molecular heterogeneity in diverse tissues

Yuan et al. present S2-omics, an end-to-end workflow that automatically identifies regions of interest in histology images to maximize molecular information capture in spatial omics experiments.

Italian mission adds to growing IRIDE space fleet

The Italian programme IRIDE, which provides public sector services based on data from its fleet of Earth observation constellations, has added eight satellites to its second constellation, Eaglet II.

The Eaglet II satellites lifted off on board a Falcon 9 rocket at 19:44 CET (10:44 local time), 28 November, from Vandenberg Space Force Base in California, US. All satellites were placed into orbit about one hour after launch. Acquisition of signal for all satellites was confirmed several hours later by OHB’s Mission Control Centre in Rome.

The launch was a rideshare carrying numerous other satellites into orbit, including HydroGNSS (ESA’s first Scout mission under its FutureEO programme) and two ICEYE satellites for Greece.

Wafer-scale uniform epitaxy of transferable 2D single crystals for gate-all-around nanosheet field effect transistors

Gate-all-around (GAA) nanosheet field-effect transistors (FETs) based on 2D semiconductors hold promise to complement silicon in future integrated circuits. Here, the authors report the wafer-scale growth of high-κ dielectric/semiconductor β-Bi2SeO5/Bi2O2Se/α-Bi2SeO5 heterostructures and their application for high performance 2D GAA FETs.

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