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Category: energy – Page 239

The third-order term Fpot(ρ)[ρq] Fpot(ρ)[ρq] above corresponds to the third-order energy in the structural expansion for electron systems. This energy plays an important role in the structural stability of metallic hydrogen 16 (Z= 1). This is because the kernel (10) has a strong wave-vector dependence, which cannot properly be treated in the square-gradient type theory. This brings a special stability of the structure in which as many equilateral triangles with q=3kF appear in the reciprocal lattice. It requires an anisotropic structure or a periodic modulation of the lattice for an atomic phase of hydrogen. Another possibility is to form a crystal with two ions in a unit cell (molecular phase). In any case, the atomic phase of bcc structure would not be realized just under the melting line as log as the third order term in Fc[ρq] does not suppress the effect. We shall investigate this problem numerically in the near future.

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Utilizing lands for Right of Ways of Interstate Highways offer a lot of solar potential.

From pv magazine USA

As more states establish renewable energy mandates and expand the penetration of solar onto their grids, officials and developers are finding that locating land for these projects can be tricky. A new study released by the University of Texas at Austin’s Webber Energy Group looks to solve some of these siting issues by using publicly available and underutilized land at interstate exits.

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Jointly issued by the Chinese Communist Party and the State Council on Sunday, the measures targeting the tech sector are an important part of Beijing’s 2020–2025 plan for the city, which include pilot reforms in areas from finance and energy to education and transport.

Beijing’s plan doubles down on hopes that Shenzhen will become a global leader in technology and finance and a showcase for Xi’s vision of an ideal Chinese society.

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Researchers have developed a method to ‘squeeze’ visible light in order to see inside tiny memory devices. The technique will allow researchers to probe how these devices break down and how their performance can be improved for a range of applications.

The team, led by the University of Cambridge, used the technique to investigate the materials used in random access memories, while in operation. The results, reported in the journal Nature Electronics, will allow detailed study of these materials, which are used in devices.

The ability to understand how structural changes characterize the function of these materials, which are used for , ultra-responsive devices called memristors, is important to improve their performance. However, looking inside the 3D nanoscale devices is difficult using traditional techniques.

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