Electronics engineers are continuously trying to develop thinner, more efficient and better performing transistors, the semiconductor devices at the core of most modern electronics. To do this, they have been evaluating the potential of a broad range of materials.
Transition metal dichalcogenides (TMDs), compounds based on transition metals and chalcogen elements, have very attractive electronic and mechanical properties that make them promising candidates for the development of future generations of transistors. Most notably, they have an atomically thin structure with no dangling bonds and a bandgap similar to that of silicon.
Despite their advantageous characteristics, TMDs have not yet been used to create transistors on a large scale. The main reason for this is the weak adhesion energy at the interface between these materials and substrates, which makes their widespread fabrication challenging.
