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Nanoscale transistors are in demand for efficient digital circuits, and biasing of each device is critical. These stringent biasing conditions can be relaxed by obtaining precise values of the threshold voltages of the transistor. This leads to more tolerant logic states to the electrical noise.

To meet the requirements of reduced , CMOS field-effect transistors (FETs) are fabricated such that they operate in enhancement (E) mode, i.e., there are no free charge carriers in the channel at zero gate . On the other hand, depletion (D) mode transistors have higher currents than enhancement mode due to ample charge carrier density.

In contrast to switching applications of FET, for high-frequency applications, off-state of FET is not a compulsory requirement. In fact, the presence of a channel at zero gate bias is advantageous to obtain high transconductance at lower voltages. For Si FETs, the enhancement or depletion modes were determined at the fabrication step of ion implantation doping. However, it is challenging to implement this solution for the new generation of thin materials like organic semiconductors and 2D materials.

Some molecules respond to external light pulses by changing their structure and holding certain states that can be switched from one to another. These are commonly referred to as photoswitches and usually have two possible states. Recently, however, scientists from the Institute of Organic Chemistry and Biochemistry of the Czech Academy of Sciences (IOCB Prague) have developed a molecule that takes the possibilities of photoswitches a step further.

The ability to link mind and machine has long been the realm of science fiction, but now improvements in our understanding may allow us to network brain to computer in the near future. Companies like Neurolink have begun to explore how to link our neurons to machine, and we’ll explore now such neural interfaces might function and how they might change our lives.

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As transistors are made ever tinier to fit more computing power into a smaller footprint, they bump up against a big problem: quantum mechanics. Electrons get jumpy in small devices and leak out, which wastes energy while degrading performance. Now a team of researchers is showing that it doesn’t have to be that way. With careful engineering, it’s possible to turn electrons’ quantum behavior into an advantage.

A team of English, Canadian, and Italian researchers have developed a single-molecule transistor that harnesses quantum effects. At low temperatures, the single-molecule device shows a strong change in current with only a small change in gate voltage, nearing a physical limit known as the sub-threshhold swing. Getting near or beyond this limit will allow transistors to be switched with lower voltages, making them more efficient and generating less waste heat. The research team, including physicists at Queen Mary University of London, achieved this by taking advantage of how quantum interference alters the flow of current in single molecules.

“We’ve demonstrated, in principle, that you can use destructive quantum interference for something useful.” —Jan Mol, Queen Mary University of London.

The integration of electronic chips in commercial devices has significantly evolved over the past decades, with engineers devising various integration strategies and solutions. Initially, computers contained a central processor or central processing unit (CPU), connected to memory units and other components via traditional communication pathways, known as front-side-bus (FSB) interfaces.

Technological advances, however, have enabled the development of new integrated circuit (IC) architectures relying on multiple chiplets and more sophisticated electronic components. Intel Corporation played a crucial role in these developments, by introducing new architectures and specifications for the design of systems with multiple packaged chiplets.

Researchers at Intel Corporation Santa Clara recently outlined a new vision for further boosting the performance of systems developed following universal chiplet interconnect express (UCIe), a specification to standardize the connections between multi-function chiplets in modern System-in-Package (SiP). Their proposed approach, presented in a paper in Nature Electronics, entails reducing the frequency in these circuits to boost their power efficiency and performance.

Largely thanks to advances in semiconductor technology, a measure called energy-efficient performance is on track to triple every two years (EEP units are 1/femtojoule-picoseconds).

In particular, the EEP increase will be enabled by the advanced packaging technologies we’ve been discussing here. Additionally, concepts such as system-technology co-optimization (STCO), where the different functional parts of a GPU are separated onto their own chiplets and built using the best performing and most economical technologies for each, will become increasingly critical.

A new study by Hebrew University has made a significant breakthrough by successfully incorporating single-photon sources into small chips that operate at room temperature. This development marks a crucial progress in the field of quantum photonics, opening up possibilities for its use in quantum computing and cryptography. It represents a key achievement in creating usable quantum photonic devices, signaling an optimistic outlook for the complete realization of quantum technologies, including computing, communication, and sensing.

A recent study, spearheaded by Boaz Lubotzky during his Ph.D. research, along with Prof. Ronen Rapaport from the Racah Institute of Physics at The Hebrew University of Jerusalem, in collaboration with teams from Los Alamos National Laboratory (LANL) in the USA and from Ulm University in Germany, unveiled a significant advancement toward the on-chip integration of single-photon sources at room temperature. This achievement represents a significant step forward in the field of quantum photonics and holds promise for various applications including quantum computing, cryptography, and sensing.