IBS scientists and their colleagues have recently report an ultimate electrocatalyst that addresses all of the issues that trouble H₂O₂ production. This new catalyst comprising the optimal Co-N₄ molecules incorporated in nitrogen-doped graphene, Co₁-NG(O), exhibits a record-high electrocatalytic reactivity, producing up to 8 times higher than the amount of H₂O₂ that can be generated from rather expensive noble metal-based electrocatalysts.

Just as we take a shower to wash away dirt and other particles, semiconductors also require a cleaning process. However, its cleaning goes to extremes to ensure even trace contaminants “leave no trace.” After all the chip fabrication materials are applied to a silicon wafer, a strict cleaning process is taken to remove residual particles. If this high-purity cleaning and particle-removal step goes wrong, electrical connections in the chip are likely to suffer from it. With ever-miniaturized gadgets on the market, the purity standards of the electronics industry reach a level equivalent to finding a needle in a desert.

That explains why hydrogen peroxide (H₂O₂), a major electronic cleaning chemical, is one of the most valuable chemical feedstocks that underpins the chip-making industry. Despite the ever-growing importance of H₂O₂, its industry has been left with an energy-intensive and multi-step method known as the anthraquinone process. This is an environmentally unfriendly process which involves the hydrogenation step using expensive palladium catalysts. Alternatively, H₂O₂ can be synthesized directly from H₂ and O₂ gas, although the reactivity is still very poor and it requires high pressure. Another eco-friendly method is to electrochemically reduce oxygen to H₂O₂ a via 2-electron pathway. Recently, noble metal-based electrocatalysts (for example, Au-Pd, Pt-Hg, and Pd-Hg) have been demonstrated to show H₂O₂ productivity although such expensive investments have seen low returns that fail to meet the scalable industry needs.