Scientists outline new processes for leveraging hafnia’s ferroelectric features with the aim of enhancing high-performance computing.

Scientists and engineers have been pushing for the past decade to leverage an elusive ferroelectric material called hafnium oxide, or hafnia, to usher in the next generation of computing memory. A team of researchers including the University of Rochester’s Sobhit Singh published a Proceedings of the National Academy of Sciences study outlining progress toward making bulk ferroelectric and antiferroelectric hafnia available for use in a variety of applications.

In a specific crystal phase, hafnia exhibits ferroelectric properties—that is, electric polarization that can be changed in one direction or another by applying an external electric field. This feature can be harnessed in data storage technology. When used in computing, ferroelectric memory has the benefit of non-volatility, meaning it retains its values even when powered off, one of several advantages over most types of memory used today.

New ultrafast method for controlling magnetic materials might enable next-generation information processing technologies.

As demands for computing resources continue to increase rapidly, scientists and engineers are looking for ways to build faster systems for processing information. One possible solution is to use patterns of electron spins, called spin waves, to transfer and process information much more rapidly than in conventional computers. So far, a major challenge has been in manipulating these ultrafast spin waves to do useful work.

Breakthrough in Spin Wave Manipulation.

By better taming the Jekyll-and-Hyde nature of an alternative to the semiconductor—one that transitions from electricity-resisting insulator to current-conducting metal—Nebraska’s Xia Hong and colleagues may have unlocked a new path to smaller, more efficient digital devices. The team reports its findings in the journal Nature Communications.

The semiconductor’s ability to conduct electricity in the Goldilocks zone—poorer than a metal, better than an insulator—positioned it as the just-right choice for engineers looking to build transistors, the tiny on-off switches that encode the 1s and 0s of binary. Apply some voltage to the control knob known as a gate insulator, and the semiconductor channel allows electric current to flow ; remove it, and that flow ceases.

Millions of those nanoscopic, semiconductor-based transistors now coat modern microchips, switching on and off to collectively process or store data. But as minuscule as the transistors already are, the demands of consumers and competition continue pushing electrical engineers to shrink them even further, either for the sake of squeezing in more functionality or downsizing the devices that house them.