Critical RCE flaws in Dahua smart cameras affect 9 models; threat enables device hijack over LAN/Internet.
Category: electronics – Page 3
RGB multiplexer based on lithium niobate enables faster, more efficient light modulation for laser beam scanning
As technology advances, photonic systems are gaining ground over traditional electronics, using light to transmit and process information more efficiently. One such optical system is laser beam scanning (LBS), where laser beams are rapidly steered to scan, sense, or display information.
This technology is used in applications ranging from barcode scanners at grocery stores to laser projectors in light shows. To process a wider range of signals or enable full-color output, these systems utilize multiplexers that merge the red, green, and blue (RGB) laser beams into a single beam.
Traditionally, this was achieved by directly modulating each laser, turning them on and off to control the output. However, this approach is relatively slow and energy intensive. A recent study by researchers at the TDK Corporation (Japan) reports the development of a faster and more energy-efficient RGB multiplexer based on thin-film lithium niobate (TFLN).
No wires needed: German physicists control electronics with light pulses
Scientists control atomically thin semiconductors using ultrashort pulses of terahertz light.
Discover how ultrashort terahertz light pulses can control semiconductors, leading to faster electronic components.
Defect Characterization and Control in 2D Materials and Devices
As soon as 2DMs are employed for devices, at some point they have to be grown or transferred onto insulators. A wide range of insulators has already been suggested for the use with 2DMs, starting with the amorphous 3D oxides known from Si technologies (SiO2, HfO2, Al2O3), and expanding to native 2D oxides (MoO3, WO3, Bi2SeO5), layered 2D crystals (hBN, mica) and 3D crystals like fluorides (CaF2, SrF2, MgF2) or perovskites (SrTiO3, BaTiO3). These insulators also contain various defects which can also be detrimental to device stability and reliability. Again, on the other hand, these defects can be exploited for added functionality like resistive switching devices, neuromorphic devices, and sensors.
Finally, 2DMs need to be contacted with metals, which typically introduces defects in the 2DMs which then have a strong impact on the behaviour of the resulting Schottky contacts as they tend to pin the Fermi-level and result in large series resistances.
This collection aims to provide a comprehensive overview of the latest research on defect characterization and control in 2D materials and devices. By bringing together studies that utilize advanced theoretical calculations, such as density functional theory (DFT) and first-principles calculations, as well as experimental techniques like transmission electron microscopy (TEM), scanning tunneling microscopy (STM), X-ray photoemission spectroscopy (XPS), atomic force microscopy (AFM), and various optical spectroscopies, this collection seeks to deepen our understanding of defect formation, propagation, control, and their impact on device performance.
New microscopy technique achieves 1-nanometer resolution for atomic-scale imaging
Understanding the interaction between light and matter at the smallest scales (angstrom scale) is essential for advancing technology and materials science. Atomic-scale structures, such as defects in diamonds or molecules in electronic devices, can significantly influence a material’s optical properties and functionality. To explore these tiny structures, we need to extend the capabilities of optical microscopy.
Researchers at the Fritz-Haber Institute of the Max-Planck Society, Germany, and their international collaborators at Institute for Molecular Science/SOKENDAI, Japan and CIC nanoGUNE, Spain have developed an approach to scattering-type scanning near-field optical microscopy (s-SNOM) that achieves a spatial resolution of 1 nanometer. This technique, termed as ultralow tip oscillation amplitude s-SNOM (ULA-SNOM), combines advanced microscopy methods to visualize materials at the atomic level.
The work is published in the journal Science Advances.
New theory clarifies why tunnel magnetoresistance oscillates with barrier thickness
Researchers have developed a new theory that explains why tunnel magnetoresistance (TMR)—used in magnetic memory and other technologies—oscillates with changes in the thickness of the insulating barrier within a magnetic tunnel junction (MTJ). This oscillation was clearly observed when NIMS recently recorded the world’s highest TMR ratio. Understanding the mechanisms behind this phenomenon is expected to significantly aid in further increasing TMR ratios.
This research is published as a letter article in Physical Review B.
The TMR effect is a phenomenon observed in thin-film structures called magnetic tunnel junctions (MTJs). It refers to changes in electrical resistance depending on the relative alignment of magnetizations in two magnetic layers (i.e., parallel or antiparallel alignment) separated by an insulating barrier. It is desirable to develop MTJs with larger TMR effects—reflected in higher TMR ratios—in order to expand their potential applications, including improvement of magnetic sensor sensitivity and expansion of magnetic memory capacity.