The growth of artificial intelligence has increased demand for more efficient data storage. Instead of adding bulk to satiate this appetite, researchers at Washington University in St. Louis are working to increase memory capacity by manipulating materials’ characteristics at the atomic level.

Rohan Mishra, an associate professor of mechanical engineering and materials science at the McKelvey School of Engineering, and his team of researchers have been pursuing this challenge. Through computational modeling, advanced microscopy and experimental collaboration with researchers at the University of Nebraska-Lincoln, Georgia Institute of Technology (Georgia Tech) and other institutions, Mishra and his team have gained exciting insights into material behavior.