A collaborative team led by researchers from City University of Hong Kong (CityU) recently invented an innovative method for synthesizing high-quality, semiconducting nanomesh at a lower temperature and production cost than conventional methods. The findings will help enable the large-scale production of nanomesh for next-generation electronics.
Nanomesh is a nano-scale material formed from a network of nanowires. For several decades, one-dimensional materials like nanowires made of crystalline inorganic materials have been widely explored as the main driver for emerging electronics, as they have features like mechanical flexibility, energy efficiency and optical transparency. However, the scalability, integrability and cost-effectiveness of nanowire semiconductors are insufficient, limiting their potential for large-area electronic and optoelectronic applications.
To overcome these shortcomings, a research team led by CityU scientists made a breakthrough, inventing a low-temperature vapor-phase growth method, which can achieve large-scale synthesis of semiconducting tellurium (Te) nanomesh for use in devices.
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