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May 18, 2022

Engineering 2D semiconductors with built-in memory functions

Posted by in categories: computing, engineering, transportation

A team of researchers at The University of Manchester’s National Graphene Institute (NGI) and the National Physical Laboratory (NPL) has demonstrated that slightly twisted 2D transition metal dichalcogenides (TMDs) display room-temperature ferroelectricity.

This characteristic, combined with TMDs’ outstanding optical properties, can be used to build multi-functional optoelectronic devices such as transistors and LEDs with built-in memory functions on nanometre length scale.

Ferroelectrics are materials with two or more electrically polarisable states that can be reversibly switched with the application of an external electric field. This material property is ideal for applications such as non-volatile memory, microwave devices, sensors and transistors. Until recently, out-of-plane switchable ferroelectricity at room temperature had been achieved only in films thicker than 3 nanometres.

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