Modern low-power solutions to computer memory rely heavily on the manipulation of the magnetic properties of materials. Understanding the influence of the chemical properties of these materials on their magnetization ability is of key importance in developing the field.
A study published in Applied Physics Letters, led by researchers from SANKEN at The University of Osaka, has revealed a technique for recovering magnetism in a degraded spintronics device. This method can be applied to improve the robustness of next-generation semiconductor memory.
Spintronics exploits the spin (and charge) of electrons to process and store memory, and this is achieved practically by stacking layers of thin material films that behave differently under the influence of a magnetic field.