The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in two publications.

Dr. Corinna Martinella, formerly a senior scientist at ETH Zurich, said in a LinkedIn post that the research advances an understanding of the basic mechanisms of radiation damage in SiC power devices exposed to heavy ions.

An article in IEEE Transactions on Nuclear Science describes the testing of how commercial silicon carbide (SiC) power devices, including MOSFETs and Junction Barrier Schottky (JBS) diodes, respond to space-like radiation at a microscopic level.