The rapid advancement of technologies like artificial intelligence (AI) and the Internet of Things (IoT) has heightened the demand for high-speed, energy-efficient memory devices. Traditional memory technologies often struggle to balance performance with power consumption.
Spintronic devices, which leverage electron spin rather than charge, present a promising alternative. In particular, TMD materials are attractive due to their unique electronic properties and potential for miniaturization.
Researchers have proposed the development of gate-controllable TMD spin valves to address these challenges. By integrating a gate mechanism, these devices can modulate spin transport properties, enabling precise control over memory operations. This approach aims to enhance tunneling magnetoresistance (TMR) ratios, improve spin current densities, and reduce power consumption during read and write processes. The study is published in the Journal of Alloys and Compounds.