Jan 22, 2024
These hafnia molecules could pave the way for next-gen memory devices
Posted by Gemechu Taye in categories: computing, engineering
For the past decade, researchers have been exploring hafnia’s ferroelectric properties, particularly in a crystal phase where it exhibits electric polarization.
To revolutionize high-performance computing, scientists and engineers are making strides in harnessing the potential of hafnium oxide, commonly known as hafnia. The latest study outlines processes for manipulating hafnia, aiming to pave the way for the next generation of computing memory.
For the past decade, researchers have explored hafnia’s ferroelectric properties, particularly in a crystal phase exhibiting electric polarization.
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