Scientists at the Department of Energy’s Oak Ridge National Laboratory have shown for the first time that ferroelectricity can be directly written into aluminum nitride using a tightly focused helium ion beam at the Center for Nanophase Materials Sciences (CNMS), a DOE Office of Science user facility at ORNL. Ferroelectric devices don’t need constant power to store data, which allows for devices that are more reliable and less power consuming than what’s currently available.

The study, published in Advanced Materials, represents a new processing approach for wurtzite III-V nitrides, a class of semiconductors already widely used in microelectronics but whose ferroelectric potential has only been recognized since 2019.

“Today, both the material and the processing method are already employed in chip manufacturing: aluminum nitride is widely used in many 5G and Wi-Fi devices, and helium ion beams are common tools to make tiny changes to circuits,” said Bogdan Dryzhakov, an ORNL postdoctoral research associate at CNMS.