Photodetectors remain a critical component in the development of advanced electronics and photonics, particularly in the role of signal readout through the conversion of photons into electrons. These digital imaging components are ubiquitous in sensors, cameras, adaptive displays, telecommunications, LiDAR systems, health monitoring wearables, and oximeters.

In the quest toward the next generation of optoelectronic devices, the spotlight lands upon ultrathin 2D materials with improved performance for integrated circuits and wearable electronics. In a recent study published in ACS Applied Electronic Materials, a team of researchers led by Haizhao Zhi and Eng Tuan Poh introduced a series of wide bandgap 2D materials—transition metal thio(seleno)phosphates into the light.

The team focused on manganese thiophosphate (MnPS₃), a wide-bandgap semiconductor that is naturally “solar-blind,” meaning it is highly sensitive to UV light while remaining transparent to much of the visible spectrum. While MnPS₃ is an excellent candidate for UV sensing, its performance as a standalone material is often limited by low carrier mobility—it acts almost like a “near-perfect insulator.”