A research team from the Faculty of Engineering at the University of Hong Kong (HKU) has successfully used mechanical stretching technology to dynamically control the emission color of gallium nitride (GaN) material from ultraviolet (UV) to blue light. This technological breakthrough provides a new semiconductor material control solution for future advanced power transistors, optoelectronic components, radio frequency components, and micro-LED displays.

The findings have been published in Physical Review X in a paper titled “Deep Elastic Strain Engineering of Free-Standing GaN Microbridge.”

Led by Professor Yang Lu from the Department of Mechanical Engineering, the team utilized micro-nano processing technology to fabricate single-crystalline GaN material into tiny bridge-like structures.