A new study led by the Aerospace Information Research Institute of the Chinese Academy of Sciences, along with their collaborators, has demonstrated that high pressure can significantly enhance and precisely tune terahertz (THz) radiation from the two-dimensional semiconductor gallium telluride (GaTe).

Using a diamond anvil cell, the research team achieved a 13-fold increase in THz emission and directly mapped the sequence of ultrafast processes that produce THz waves.

Their findings are published in Laser & Photonics Reviews.