The ability to reliably switch the direction of magnetic alignment in materials, a process known as magnetization switching, is known to be central to the functioning of most memory devices. One known strategy to achieve entails the creation of a rotational force (i.e., torque) on electron spins via an electric current; a physical effect known as spin-orbit torque (SOT).

Information storage devices that rely on this effect are called spin-orbit torque magnetic random-access memories (SOT-MRAMs). These memory systems have been found to have various notable advantages, such as the ability to retain data even when their electrical power is turned off, fast switching compared to other various existing memory solutions and low power consumption.

Researchers at National Yang Ming Chiao Tung University, the Taiwan Semiconductor Manufacturing Company, the Industrial Technology Research Institute and other institutes recently developed a new SOT-MRAM based on composite materials that contain the heavy metal tungsten, which is known for its strong spin-orbit coupling. Their memory device, introduced in a paper published in Nature Electronics, could be fabricated via existing processes for the large-scale production of semiconductors.