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Self-powered photodetector achieves 20-fold sensitivity boost using novel device structure

Silicon semiconductors used in existing photodetectors have low light responsivity, and the two-dimensional semiconductor MoS₂ (molybdenum disulfide) is so thin that doping processes to control its electrical properties are difficult, limiting the realization of high-performance photodetectors.

A KAIST research team has overcome this technical limitation and developed the world’s highest-performing self-powered photodetector, which operates without electricity in environments with a light source. This paves the way for precise sensing without batteries in , biosignal monitoring, IoT devices, autonomous vehicles, and robots, as long as a is present.

Professor Kayoung Lee’s research team from the School of Electrical Engineering developed the self-powered photodetector, which demonstrated a sensitivity up to 20 times higher than existing products, marking the highest performance level among comparable technologies reported to date. The work is published in the journal Advanced Functional Materials.

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