A research team from the Ningbo Institute of Materials Technology and Engineering (NIMTE) of the Chinese Academy of Sciences (CAS) has proposed a hybrid transfer and epitaxy strategy, enabling the heterogeneous integration of single-crystal oxide spin Hall materials on silicon substrates for high-performance oxide-based spintronic devices.

The study is published in Advanced Functional Materials.

Spintronic devices are gaining attention as a key direction for next-generation information technologies due to their low power consumption, non-volatility, and ultra-fast operating capabilities.