A major breakthrough at POSTECH could dramatically boost AI speeds and device efficiency.

Researchers have, for the first time, decoded how Electrochemical Random-Access Memory (ECRAM) works, using a special technique to observe internal electron behavior even at extreme temperatures. This hidden mechanism, where oxygen vacancies act like shortcuts for electrons, could unlock faster AI systems and longer-lasting smartphones, laptops, and tablets.

Breakthrough at POSTECH: boosting AI efficiency.