A UNSW study published today in Nature Communications presents an exciting step towards domain-wall nanoelectronics: a novel form of future electronics based on nano-scale conduction paths, and which could allow for extremely dense memory storage.
FLEET researchers at the UNSW School of Materials Science and Engineering have made an important step in solving the technology’s primary long-standing challenge of information stability.
Domain walls are “atomically sharp” topological defects separating regions of uniform polarisation in ferroelectric materials.