To improve data storage, researchers are perfecting 3D NAND flash memory, which stacks cells to maximize space.

Researchers have discovered a faster, more efficient way to etch deep holes in 3D NAND flash memory using advanced plasma.

Plasma is one of the four fundamental states of matter, along with solid, liquid, and gas. It is an ionized gas consisting of positive ions and free electrons. It was first described by chemist Irving Langmuir in the 1920s.