Long gone are the days where all our data could fit on a two-megabyte floppy disk. In today’s information-based society, the increasing volume of information being handled demands that we switch to memory options with the lowest power consumption and highest capacity possible.
Magnetoresistive Random Access Memory (MRAM) is part of the next generation of storage devices expected to meet these needs. Researchers at the Advanced Institute for Materials Research (WPI-AIMR) investigated a cobalt-manganese-iron alloy thin film that demonstrates a high perpendicular magnetic anisotropy (PMA)—key aspects for fabricating MRAM devices using spintronics.
The findings were published in Science and Technology of Advanced Materials on November 13, 2024.
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