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Transistors based on two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS₂) and tungsten diselenide (WSe₂), could outperform conventional silicon-based transistors, while also being easier to reduce in size. To perform well, these transistors need to be based on high-quality dielectric materials, which can be difficult to prepare.

Researchers at Nanyang Technological University, Nanjing University of Aeronautics and Astronautics recently introduced a new promising strategy to prepare the dielectric materials for these transistors. Their approach, outlined in a paper published in Nature Electronics, was successfully used to deposit an ultrathin and uniform native oxide of gallium Ga₂O₃ on the surface of MoS₂.

“Traditional methods of preparing dielectric layer, such as atomic layer deposition (ALD), encounter quality problems because of the high-quality surface of 2D semiconductors without sufficient nucleation points, especially at thin thicknesses down to a few nanometers,” Kongyang Yi, first author of the paper, told Tech Xplore.