After the advent of 5G, engineers have been trying to devise techniques to further enhance wireless communication technology. To increase these systems’ data transmission rate, they will ultimately need to extend their carrier frequency beyond 100 gigahertz, reaching the terahertz range.
Existing devices and technologies, however, have proved to be unable to achieve such high carrier frequencies. One proposed solution to reach this goal entails the use of some quantum materials that exhibit the so-called non-linear Hall effect.
Researchers at Helmholtz-Zentrum Dresden-Rossendorf (HZDR) e. V. and University of Salerno have identified a promising material for the development of next generation wireless communication systems, namely thin film elemental bismuth. Their paper, published in Nature Electronics, shows that this material exhibits a room-temperature nonlinear Hall effect.
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