Recent research realizes ferroelectric hafnium oxide memristors with ultra-low conductance and inherent current-voltage nonlinearity to mitigate limitations that have obstructed commercialization of brain-inspired neuromorphic hardware.
Recent research realizes ferroelectric hafnium oxide memristors with ultra-low conductance and inherent current-voltage nonlinearity to mitigate limitations that have obstructed commercialization of brain-inspired neuromorphic hardware.
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