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Jan 24, 2024

Manipulated hafnia paves the way for next-gen memory devices

Posted by in categories: computing, materials

Scientists and engineers have been pushing for the past decade to leverage an elusive ferroelectric material called hafnium oxide, or hafnia, to usher in the next generation of computing memory.


Scientists outline new processes for leveraging the ferroelectric features of hafnia with the aim of enhancing high-performance computing.

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