In the era of big data and advanced artificial intelligence, traditional data storage methods are becoming inadequate. To address the need for high-capacity and energy-efficient storage solutions, the development of next-generation technologies is crucial.
Among these is resistive random-access memory (RRAM), which relies on altering resistance levels to store data. A recent study published in the journal Angewandte Chemie details the work of a research team who have pioneered a method for creating supramolecular memristors, one of the key components in the construction of nano-RRAM.
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