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Sep 3, 2022

Scientists Unravel “Hall Effect” Physics Mystery

Posted by in categories: computing, physics

A multinational group of scientists has made progress in the use of antiferromagnetic materials in memory storage devices.

Antiferromagnets are materials with an internal magnetic field induced by electron spin but virtually no external magnetic field. Since there is no external (or “long-range”) magnetic field, the data units, or bits, may be packed more densely inside the material, making them potentially useful for data storage.

The ferromagnets commonly utilized in typical magnetic memory devices are the opposite. These devices do have long-range magnetic fields produced by the bits that prevent them from being packed too tightly together since otherwise they would interact.

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