May 18, 2019

Samsung at foundry event talks about 3nm, MBCFET developments

Posted by in category: computing

“The nanometer process deals with the space between the transistors mounted on a substrate at a nanometer level,” said Pulse.

“The narrower the distance, the more chips can be squeezed in to boost computing power and energy efficiency. One nanometer corresponds to one ten-thousandth the diameter of a human hair.”

At the Samsung Foundry Forum in Santa Clara, California, the company recently sought to impress advancements it has made in 3nm gate-all-around (GAA) process development.

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