A sub-nanometer buffer improved atomically thin transistors, pushing future chips closer to silicon’s limits.
A transistor channel only one atom thick sounds like an ideal foundation for the next generation of computer chips. But surrounding that channel with the materials needed to control it can erase much of its advantage.
Researchers at National Yang Ming Chiao Tung University (NYCU) and TSMC Corporate Research have now demonstrated a possible way around that problem. Instead of developing another semiconductor, they redesigned the tiny interface where the semiconductor meets its insulating layer.
