Researchers at The University of Osaka, in collaboration with Ritsumeikan University, have demonstrated that growing europium-doped gallium nitride (Eu-doped GaN) on a semipolar crystal plane dramatically improves red light emission. The team found that this approach selectively promotes the formation of highly efficient Eu luminescent centers, resulting in red emission intensity more than 3.6 times higher than that of conventionally grown polar-plane material.
The study is published in the journal Applied Physics Letters.
Red emitters based on Eu-doped GaN are attracting attention as promising light sources for next-generation micro-LED displays because they can provide narrow-linewidth, wavelength-stable red emission based on intra-4f-shell transitions of Eu ions. This is particularly important for full-color monolithic integration with blue and green InGaN LEDs, where wavelength stability under device operation is essential.








