A method that can grow a useful insulating material into exceptionally high-quality films that are just one atom thick and are suitable for industrial-scale production has been developed by an international team led by Xixiang Zhang from KAUST.
The work is published in the journal Nature Communications.
The material, called hexagonal boron nitride (hBN), is used in semiconductor devices and can also enhance the performance of other two-dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDs).
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