Oct 22, 2016
4DS Memristor achieves technical milestone of memory cells denser than 3D flash with commerciallization in the 2019 timeframe
Posted by Klaus Baldauf in category: computing
4DS has demonstrated Interface Switching ReRAM cells at a 40 nanometer geometry, representing significant progress in scalability and yield.
This 40nm geometry, demonstrated by 4DS, is smaller than the latest generation of 3D Flash — the most dominant non-volatile memory technology used in billions of mobile devices, cloud servers and data centers.
In 2016, 4DS has: