Researchers at Fudan University in China have recently been trying to identify new promising quantum anomalous Hall insulators. Their latest paper, published in Physical Review Letters, outlines the unique characteristics of monolayer V2MX4, which could belong to a new family of quantum anomalous Hall insulators.
“Finding intrinsic quantum anomalous Hall materials is an important goal in topological material research,” Jing Wang, co-author of the paper, told Phys.org. “After we predicted MnBi2Te4, a paradigm example of magnetic topological insulator and exhibiting quantum anomalous Hall effect in odd layer, we have been thinking about finding new intrinsic quantum anomalous Hall insulator with large gap.”
Large-gap quantum anomalous Hall insulator materials exhibit a quantum anomalous Hall effect with a relatively large energy gap between the valence and conduction band. These materials should exhibit a synergy between two seemingly conflicting properties, namely spin-orbit coupling and ferromagnetism.
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