{"id":223325,"date":"2025-10-13T12:09:49","date_gmt":"2025-10-13T17:09:49","guid":{"rendered":"https:\/\/lifeboat.com\/blog\/2025\/10\/next-generation-memory-tungsten-based-sot-mram-achieves-nanosecond-switching-and-low-power-data-storage"},"modified":"2025-10-13T12:09:49","modified_gmt":"2025-10-13T17:09:49","slug":"next-generation-memory-tungsten-based-sot-mram-achieves-nanosecond-switching-and-low-power-data-storage","status":"publish","type":"post","link":"https:\/\/lifeboat.com\/blog\/2025\/10\/next-generation-memory-tungsten-based-sot-mram-achieves-nanosecond-switching-and-low-power-data-storage","title":{"rendered":"Next-generation memory: Tungsten-based SOT-MRAM achieves nanosecond switching and low-power data storage"},"content":{"rendered":"

<\/a><\/p>\n

The ability to reliably switch the direction of magnetic alignment in materials, a process known as magnetization switching, is known to be central to the functioning of most memory devices. One known strategy to achieve entails the creation of a rotational force (i.e., torque) on electron spins via an electric current; a physical effect known as spin-orbit torque (SOT).<\/p>\n

Information storage devices that rely on this effect are called spin-orbit torque magnetic random-access memories (SOT-MRAMs). These memory systems have been found to have various notable advantages, such as the ability to retain data even when their electrical power<\/a> is turned off, fast switching compared to other various existing memory solutions and low power consumption<\/a>.<\/p>\n

Researchers at National Yang Ming Chiao Tung University, the Taiwan Semiconductor Manufacturing Company, the Industrial Technology Research Institute and other institutes recently developed a new SOT-MRAM based on composite materials<\/a> that contain the heavy metal tungsten, which is known for its strong spin-orbit coupling. Their memory device, introduced in a paper published<\/a> in Nature Electronics<\/i>, could be fabricated via existing processes for the large-scale production of semiconductors.<\/p>\n","protected":false},"excerpt":{"rendered":"

The ability to reliably switch the direction of magnetic alignment in materials, a process known as magnetization switching, is known to be central to the functioning of most memory devices. One known strategy to achieve entails the creation of a rotational force (i.e., torque) on electron spins via an electric current; a physical effect known [\u2026]<\/p>\n","protected":false},"author":662,"featured_media":0,"comment_status":"open","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[1523,1635],"tags":[],"class_list":["post-223325","post","type-post","status-publish","format-standard","hentry","category-computing","category-materials"],"_links":{"self":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/posts\/223325","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/users\/662"}],"replies":[{"embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/comments?post=223325"}],"version-history":[{"count":0,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/posts\/223325\/revisions"}],"wp:attachment":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/media?parent=223325"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/categories?post=223325"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/tags?post=223325"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}