{"id":200817,"date":"2024-12-06T05:24:08","date_gmt":"2024-12-06T11:24:08","guid":{"rendered":"https:\/\/lifeboat.com\/blog\/2024\/12\/new-strategy-enhances-2d-transistor-dielectric-layers"},"modified":"2024-12-06T05:24:08","modified_gmt":"2024-12-06T11:24:08","slug":"new-strategy-enhances-2d-transistor-dielectric-layers","status":"publish","type":"post","link":"https:\/\/lifeboat.com\/blog\/2024\/12\/new-strategy-enhances-2d-transistor-dielectric-layers","title":{"rendered":"New strategy enhances 2D transistor dielectric layers"},"content":{"rendered":"<p><a class=\"aligncenter blog-photo\" href=\"https:\/\/lifeboat.com\/blog.images\/new-strategy-enhances-2d-transistor-dielectric-layers2.jpg\"><\/a><\/p>\n<p>Transistors based on two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS<sub>2<\/sub>) and tungsten diselenide (WSe<sub>2<\/sub>), could outperform conventional silicon-based transistors, while also being easier to reduce in size. To perform well, these transistors need to be based on high-quality dielectric materials, which can be difficult to prepare.<\/p>\n<p>Researchers at Nanyang Technological University, Nanjing University of Aeronautics and Astronautics recently introduced a new promising strategy to prepare the dielectric materials for these transistors. Their approach, outlined in <a href=\"https:\/\/www.nature.com\/articles\/s41928-024-01286-x\" target=\"_blank\">a paper published in <i>Nature Electronics<\/i>,<\/a> was successfully used to deposit an ultrathin and uniform native oxide of <a href=\"https:\/\/techxplore.com\/tags\/gallium\/\" rel=\"tag\" class=\"\">gallium<\/a> Ga<sub>2<\/sub>O<sub>3<\/sub> on the surface of MoS<sub>2<\/sub>.<\/p>\n<p>\u201cTraditional methods of preparing dielectric layer, such as <a href=\"https:\/\/techxplore.com\/tags\/atomic+layer+deposition\/\" rel=\"tag\" class=\"\">atomic layer deposition<\/a> (ALD), encounter quality problems because of the high-quality surface of 2D semiconductors without sufficient nucleation points, especially at thin thicknesses down to a few nanometers,\u201d Kongyang Yi, first author of the paper, told Tech Xplore.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Transistors based on two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), could outperform conventional silicon-based transistors, while also being easier to reduce in size. To perform well, these transistors need to be based on high-quality dielectric materials, which can be difficult to prepare. Researchers at Nanyang Technological University, Nanjing University of [\u2026]<\/p>\n","protected":false},"author":650,"featured_media":0,"comment_status":"open","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[1523,1635],"tags":[],"class_list":["post-200817","post","type-post","status-publish","format-standard","hentry","category-computing","category-materials"],"_links":{"self":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/posts\/200817","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/users\/650"}],"replies":[{"embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/comments?post=200817"}],"version-history":[{"count":0,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/posts\/200817\/revisions"}],"wp:attachment":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/media?parent=200817"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/categories?post=200817"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/tags?post=200817"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}