{"id":194046,"date":"2024-08-04T18:25:13","date_gmt":"2024-08-04T23:25:13","guid":{"rendered":"https:\/\/lifeboat.com\/blog\/2024\/08\/a-strategy-to-synthesize-fin-like-metal-nanosheets-for-2d-transistors"},"modified":"2024-08-04T18:25:13","modified_gmt":"2024-08-04T23:25:13","slug":"a-strategy-to-synthesize-fin-like-metal-nanosheets-for-2d-transistors","status":"publish","type":"post","link":"https:\/\/lifeboat.com\/blog\/2024\/08\/a-strategy-to-synthesize-fin-like-metal-nanosheets-for-2d-transistors","title":{"rendered":"A strategy to synthesize fin-like metal nanosheets for 2D transistors"},"content":{"rendered":"<p><a class=\"aligncenter blog-photo\" href=\"https:\/\/lifeboat.com\/blog.images\/a-strategy-to-synthesize-fin-like-metal-nanosheets-for-2d-transistors3.jpg\"><\/a><\/p>\n<p>The effective integration of extremely thin insulating layers with two-dimensional (2D) semiconductors could enable the fabrication of 2D transistors with an electrical capacitance comparable to SiO<sub>2<\/sub> with thicknesses below 1-nm. These transistors could, in turn, help to boost the performance and reduce the power consumption of electronic devices.<\/p>\n<p>Researchers at Nankai University in China recently introduced a new strategy to synthesize single-crystalline metal nanosheets that could be easily transferred onto 2D substrates. This strategy, outlined in a <a href=\"https:\/\/www.nature.com\/articles\/s41928-024-01202-3\" target=\"_blank\">paper<\/a> in <i>Nature Electronics<\/i>, was successfully used to deposit 2-nm-thick dielectrics based on Al<sub>2<\/sub>O<sub>3<\/sub> or HfO<sub>2<\/sub> for highly performing top-gated transistors.<\/p>\n<p>\u201cAt the very beginning, we aimed to developing the <a href=\"https:\/\/techxplore.com\/tags\/chemical+vapor+deposition\/\" rel=\"tag\" class=\"\">chemical vapor deposition<\/a> (CVD) synthetic strategy of 2D Cu<sub>2<\/sub>O, which is a <i>p<\/i>-type high-mobility 2D semiconductor,\u201d Jinxiong Wu, corresponding author of the paper, told Tech Xplore.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>The effective integration of extremely thin insulating layers with two-dimensional (2D) semiconductors could enable the fabrication of 2D transistors with an electrical capacitance comparable to SiO2 with thicknesses below 1-nm. These transistors could, in turn, help to boost the performance and reduce the power consumption of electronic devices. Researchers at Nankai University in China recently [\u2026]<\/p>\n","protected":false},"author":367,"featured_media":0,"comment_status":"open","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[19,1523],"tags":[],"class_list":["post-194046","post","type-post","status-publish","format-standard","hentry","category-chemistry","category-computing"],"_links":{"self":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/posts\/194046","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/users\/367"}],"replies":[{"embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/comments?post=194046"}],"version-history":[{"count":0,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/posts\/194046\/revisions"}],"wp:attachment":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/media?parent=194046"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/categories?post=194046"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/tags?post=194046"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}