{"id":180961,"date":"2024-01-20T14:24:07","date_gmt":"2024-01-20T20:24:07","guid":{"rendered":"https:\/\/lifeboat.com\/blog\/2024\/01\/tsmc-tandem-builds-exotic-new-mram-based-memory-with-radically-lower-latency-and-power-consumption"},"modified":"2024-01-20T14:24:07","modified_gmt":"2024-01-20T20:24:07","slug":"tsmc-tandem-builds-exotic-new-mram-based-memory-with-radically-lower-latency-and-power-consumption","status":"publish","type":"post","link":"https:\/\/lifeboat.com\/blog\/2024\/01\/tsmc-tandem-builds-exotic-new-mram-based-memory-with-radically-lower-latency-and-power-consumption","title":{"rendered":"TSMC tandem builds exotic new MRAM-based memory with radically lower latency and power consumption"},"content":{"rendered":"<p><a class=\"aligncenter blog-photo\" href=\"https:\/\/lifeboat.com\/blog.images\/tsmc-tandem-builds-exotic-new-mram-based-memory-with-radically-lower-latency-and-power-consumption2.jpg\"><\/a><\/p>\n<p>Data is written to the memory cell by changing the magnetization in the free layer (which acts as the \u2018storage\u2019 layer in the MRAM bit cell) by passing a current through the heavy metal layer, which generates a spin current and injects it into the adjacent magnetic layer, switching its orientation and thus changing its state. Reading data involves assessing the magnetoresistance of the MTJ by directing a current through the junction. The main difference between STT-and SOT-MRAM resides in the current injection geometry used for the write process, and apparently, the SOT method ensures lower power consumption and device longevity.<\/p>\n<p>While SOT-MRAM offers lower standby power than SRAM, it needs high currents for write operations, so its dynamic power consumption is still quite high. Furthermore, SOT-SRAM cells are still larger than SRAM cells, and they are harder to make. As a result, while the SOT-SRAM technology looks promising, it is unlikely that it will replace SRAM any time soon. Yet, for in-memory computing applications, SOT-MRAM could make a lot of sense, if not now, but when TSMC learns how to make SOT-MRAM cost-efficiently.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Data is written to the memory cell by changing the magnetization in the free layer (which acts as the \u2018storage\u2019 layer in the MRAM bit cell) by passing a current through the heavy metal layer, which generates a spin current and injects it into the adjacent magnetic layer, switching its orientation and thus changing its [\u2026]<\/p>\n","protected":false},"author":661,"featured_media":0,"comment_status":"open","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[1523,269],"tags":[],"class_list":["post-180961","post","type-post","status-publish","format-standard","hentry","category-computing","category-life-extension"],"_links":{"self":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/posts\/180961","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/users\/661"}],"replies":[{"embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/comments?post=180961"}],"version-history":[{"count":0,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/posts\/180961\/revisions"}],"wp:attachment":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/media?parent=180961"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/categories?post=180961"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/tags?post=180961"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}