{"id":167769,"date":"2023-07-18T22:23:31","date_gmt":"2023-07-19T03:23:31","guid":{"rendered":"https:\/\/lifeboat.com\/blog\/2023\/07\/protons-set-to-power-next-generation-memory-devices"},"modified":"2023-07-18T22:23:31","modified_gmt":"2023-07-19T03:23:31","slug":"protons-set-to-power-next-generation-memory-devices","status":"publish","type":"post","link":"https:\/\/lifeboat.com\/blog\/2023\/07\/protons-set-to-power-next-generation-memory-devices","title":{"rendered":"Protons set to power next-generation memory devices"},"content":{"rendered":"<p><a class=\"aligncenter blog-photo\" href=\"https:\/\/lifeboat.com\/blog.images\/protons-set-to-power-next-generation-memory-devices.jpg\"><\/a><\/p>\n<p>A proton-driven approach that enables multiple ferroelectric phase transitions sets the stage for ultralow power, high-capacity computer chips.<\/p>\n<p>A proton-mediated approach that produces multiple <a href=\"https:\/\/phys.org\/tags\/phase+transitions\/\" rel=\"tag\" class=\"\">phase transitions<\/a> in <a href=\"https:\/\/phys.org\/tags\/ferroelectric+materials\/\" rel=\"tag\" class=\"\">ferroelectric materials<\/a> could help develop high-performance memory devices, such as brain-inspired, or neuromorphic, computing chips, a KAUST-led international team has found. The paper is published in the journal Science Advances.<\/p>\n<p>Ferroelectrics, such as indium selenide, are intrinsically polarized materials that switch polarity when placed in an <a href=\"https:\/\/phys.org\/tags\/electric+field\/\" rel=\"tag\" class=\"\">electric field<\/a>, which makes them attractive for creating memory technologies. In addition to requiring low operating voltages, the resulting memory devices display excellent maximum read\/write endurance and write speeds, but their storage capacity is low. This is because existing methods can only trigger a few ferroelectric phases, and capturing these phases is experimentally challenging, says Xin He, who co-led the study under the guidance of Fei Xue and Xixiang Zhang.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>A proton-driven approach that enables multiple ferroelectric phase transitions sets the stage for ultralow power, high-capacity computer chips. A proton-mediated approach that produces multiple phase transitions in ferroelectric materials could help develop high-performance memory devices, such as brain-inspired, or neuromorphic, computing chips, a KAUST-led international team has found. The paper is published in the journal [\u2026]<\/p>\n","protected":false},"author":661,"featured_media":0,"comment_status":"open","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[1635,6],"tags":[],"class_list":["post-167769","post","type-post","status-publish","format-standard","hentry","category-materials","category-robotics-ai"],"_links":{"self":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/posts\/167769","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/users\/661"}],"replies":[{"embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/comments?post=167769"}],"version-history":[{"count":0,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/posts\/167769\/revisions"}],"wp:attachment":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/media?parent=167769"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/categories?post=167769"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/tags?post=167769"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}