{"id":150059,"date":"2022-11-13T15:25:46","date_gmt":"2022-11-13T21:25:46","guid":{"rendered":"https:\/\/lifeboat.com\/blog\/2022\/11\/high-current-gain-transistor-laser"},"modified":"2022-11-13T15:25:46","modified_gmt":"2022-11-13T21:25:46","slug":"high-current-gain-transistor-laser","status":"publish","type":"post","link":"https:\/\/lifeboat.com\/blog\/2022\/11\/high-current-gain-transistor-laser","title":{"rendered":"High current gain transistor laser"},"content":{"rendered":"<p><a class=\"aligncenter blog-photo\" href=\"https:\/\/lifeboat.com\/blog.images\/high-current-gain-transistor-laser2.jpg\"><\/a><\/p>\n<p>Circa 2016 <span class=\"wp-smiley emoji emoji-face_with_colon_three\" title=\":3\">face_with_colon_three<\/span> <\/p>\n<hr>\n<p>A transistor laser (TL)<sup><a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 1\" title=\"Walter, G., Holonyak Jr., N., Feng, M. & Chan, R. Laser operation of a heterojunction bipolar light-emitting transistor. Appl. Phys. Lett. 85, 4768&ndash;4770 (2004).\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR1\" id=\"ref-link-section-d229823429e319\">1<\/a>,<a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 2\" title=\"Feng, M., Holonyak Jr., N., Walte, r G. & Chan, R. Room temperature continuous wave operation of a heterojunction bipolar transistor laser. Appl. Phys. Lett. 87, 131103 (2005).\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR2\" id=\"ref-link-section-d229823429e322\">2<\/a>,<a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 3\" title=\"Dixon, F. et al. Transistor laser with emission wavelength at 1544\u2009nm. Appl. Phys. Lett. 93, 021111 (2008).\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR3\" id=\"ref-link-section-d229823429e325\">3<\/a><\/sup>, having the structure of a transistor with multi-quantum wells (MQWs) near its base region, bridges the functionality gap between lasers and transistors. From a TL, an electrical signal can be outputted simultaneously with a light signal by inputting one electrical signal, making it suitable for future high performance optoelectronic integrated device applications<sup><a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 4\" title=\"Holonyak, N. & Feng, M. The transistor laser. IEEE Spectrum 43, 50&ndash;55 (2006).\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR4\" id=\"ref-link-section-d229823429e329\">4<\/a><\/sup>. As a new kind of semiconductor laser or transistor, TLs have aroused many interests since its invention. For example, in 2006, the paper<sup><a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 2\" title=\"Feng, M., Holonyak Jr., N., Walte, r G. & Chan, R. Room temperature continuous wave operation of a heterojunction bipolar transistor laser. Appl. Phys. Lett. 87, 131103 (2005).\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR2\" id=\"ref-link-section-d229823429e333\">2<\/a><\/sup> reporting the first room temperature operation of TLs was voted as one of the five most important papers published by Applied Physics Letters in over 40 years<sup><a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 5\" title=\"Kloeppel, J. E. Illinois researchers produce two most important scientific papers, Eurekalert, http:\/\/www.eurekalert.org\/pub_releases\/2006-06\/uoia-irp060506.php (2006), date of access 5 June 2006.\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR5\" id=\"ref-link-section-d229823429e337\">5<\/a><\/sup>. Because of the transistor structure, many interesting characters have been demonstrated, including resonance free frequency response, large direct modulation band width<sup><a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 6\" title=\"Tan, F., Bambery, R., Feng, M. & Holonyak Jr. N. Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb\/s data rate modulation. Appl. Phys. Lett. 99, 061105 (2011).\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR6\" id=\"ref-link-section-d229823429e341\">6<\/a><\/sup>, voltage controlled mode of operation<sup><a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 7\" title=\"Feng, M., Holonyak Jr., N., Then, H. W., Wu, C. H. & Walter, G. Tunnel junction transistor laser. Appl. Phys. Lett. 94, 041118 (2009).\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR7\" id=\"ref-link-section-d229823429e346\">7<\/a><\/sup>, low relative intensity noise (RIN) close to the shot-noise limit<sup><a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 8\" title=\"Tan, F., Bambery, R., Feng, M. & Holonyak Jr., N. Relative intensity noise of a quantum well transistor laser. Appl. Phys. Lett. 101, 151118 (2012).\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR8\" id=\"ref-link-section-d229823429e350\">8<\/a><\/sup> and low 3rd order intermodulation distortion (IMD)<sup><a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 9\" title=\"Then, H. W., Tan, F., Feng, M. & Holonyak Jr., N. Transistor laser optical and electrical linearity enhancement with collector current feedback. Appl. Phys. Lett. 100, 221104 (2012).\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR9\" id=\"ref-link-section-d229823429e354\">9<\/a><\/sup>.<\/p>\n<p>However, light emission for all the TLs reported up to now is produced at the expense of current gain. Taking npn TLs as an example, in the devices, electrons injected from the emitter into the base layer first recombine with holes radiatively before the left being collected by the collector<sup><a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 4\" title=\"Holonyak, N. & Feng, M. The transistor laser. IEEE Spectrum 43, 50&ndash;55 (2006).\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR4\" id=\"ref-link-section-d229823429e361\">4<\/a><\/sup>. The majority of the electrons are consumed by stimulated light emissions, leading to a current gain which is a lot lower than the gain of a traditional transistor. The common emitter (CE) mode current gain (collector current\/base current) is lower than 5 for most, if not all, of the TLs studied, either experimentally<sup><a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 1\" title=\"Walter, G., Holonyak Jr., N., Feng, M. & Chan, R. Laser operation of a heterojunction bipolar light-emitting transistor. Appl. Phys. Lett. 85, 4768&ndash;4770 (2004).\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR1\" id=\"ref-link-section-d229823429e365\">1<\/a>,<a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 2\" title=\"Feng, M., Holonyak Jr., N., Walte, r G. & Chan, R. Room temperature continuous wave operation of a heterojunction bipolar transistor laser. Appl. Phys. Lett. 87, 131103 (2005).\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR2\" id=\"ref-link-section-d229823429e368\">2<\/a>,<a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 3\" title=\"Dixon, F. et al. Transistor laser with emission wavelength at 1544\u2009nm. Appl. Phys. Lett. 93, 021111 (2008).\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR3\" id=\"ref-link-section-d229823429e371\">3<\/a>,<a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 6\" title=\"Tan, F., Bambery, R., Feng, M. & Holonyak Jr. N. Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb\/s data rate modulation. Appl. Phys. Lett. 99, 061105 (2011).\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR6\" id=\"ref-link-section-d229823429e374\">6<\/a>,<a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 7\" title=\"Feng, M., Holonyak Jr., N., Then, H. W., Wu, C. H. & Walter, G. Tunnel junction transistor laser. Appl. Phys. Lett. 94, 041118 (2009).\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR7\" id=\"ref-link-section-d229823429e377\">7<\/a>,<a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 8\" title=\"Tan, F., Bambery, R., Feng, M. & Holonyak Jr., N. Relative intensity noise of a quantum well transistor laser. Appl. Phys. Lett. 101, 151118 (2012).\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR8\" id=\"ref-link-section-d229823429e380\">8<\/a>,<a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 9\" title=\"Then, H. W., Tan, F., Feng, M. & Holonyak Jr., N. Transistor laser optical and electrical linearity enhancement with collector current feedback. Appl. Phys. Lett. 100, 221104 (2012).\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR9\" id=\"ref-link-section-d229823429e384\">9<\/a>,<a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 10\" title=\"Sato, N. et al. Design and characterization of AlGaInAs\/InP buried heterostructure transistor lasers emitting at 1.3-\u03bcm wavelength. IEEE J. Sel. Top. Quantum Electron. 19, 1,502,608 (2013).\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR10\" id=\"ref-link-section-d229823429e387\">10<\/a><\/sup> or numerically<sup><a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 11\" title=\"Liang, S. et al. Temperature performance of the edge emitting transistor laser. Appl. Phys. Lett. 99, 013503 (2011).\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR11\" id=\"ref-link-section-d229823429e391\">11<\/a>,<a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 12\" title=\"Duan, Z. G. et al. Design and epitaxy of 1.5\u2009\u03bcm InGaAsP-InP MQW material for a transistor laser. Opt. Express 18, 1501&ndash;1509 (2010).\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR12\" id=\"ref-link-section-d229823429e394\">12<\/a>,<a data-track=\"click\" data-track-action=\"reference anchor\" data-track-label=\"link\" data-test=\"citation-ref\" aria-label=\"Reference 13\" title=\"Shi, W., Chrostowski, L. & Faraji, B. Numerical study of the optical saturation and voltage control of a transistor vertical-cavity surface-emitting laser. IEEE Photon. Technol. Lett. 20, 2141&ndash;2143 (2008).\" href=\"https:\/\/www.nature.com\/articles\/srep27850#ref-CR13\" id=\"ref-link-section-d229823429e397\">13<\/a><\/sup>. The low current gain may limit the performance of systems that use TLs. For example, it is much easier to integrate monolithically a heterojunction bipolar transistor (HBT) and a TL than to integrate an HBT with a laser diode (LD) because of the dual functionality of TLs. For such applications, a large current gain of TL (used as HBT) is desired for the amplification of electrical signal to drive the laser.<\/p>\n<p>In this work, we propose a novel TL structure which has an n-doped InP layer inserted in the emitter ridge, forming a flow aperture in the center of the emitter ridge for only holes. Here after, the TLs having the hole current aperture is designated as a-TLs. The properties of the a-TLs are systematically studied numerically. It is shown that while the light emission power of a-TLs is comparable with that of TLs without the aperture at the same base current, the CE current gain of a-TLs can be over 15 times larger.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Circa 2016 face_with_colon_three A transistor laser (TL)1,2,3, having the structure of a transistor with multi-quantum wells (MQWs) near its base region, bridges the functionality gap between lasers and transistors. From a TL, an electrical signal can be outputted simultaneously with a light signal by inputting one electrical signal, making it suitable for future high performance [\u2026]<\/p>\n","protected":false},"author":513,"featured_media":0,"comment_status":"open","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[1523,1617],"tags":[],"class_list":["post-150059","post","type-post","status-publish","format-standard","hentry","category-computing","category-quantum-physics"],"_links":{"self":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/posts\/150059","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/users\/513"}],"replies":[{"embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/comments?post=150059"}],"version-history":[{"count":0,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/posts\/150059\/revisions"}],"wp:attachment":[{"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/media?parent=150059"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/categories?post=150059"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/lifeboat.com\/blog\/wp-json\/wp\/v2\/tags?post=150059"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}